Three dimensional etching process
US6682657B2 · kind B2 · utility
4Cited by
14References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 7, 1998 |
| Grant date | Jan 27, 2004 |
| Priority date | — |
| Expiry date | Jul 7, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B3/0056
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of forming three-dimensional structures on a substrate by a single reactive ion each run whereby a mask is formed on said substrate before a series of iterations are carried out, each iteration including a mask etch and a substrate etch, so that successive iterations give life to reduction in the mask area and exposure of further areas of substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.