High temperature deposition of Pt/TiOx for bottom electrodes
US6682772B1 · kind B1 · utility
13Cited by
5References
9Claims
0Family size
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Key dates
| Filing date | Apr 24, 2000 |
| Grant date | Jan 27, 2004 |
| Priority date | — |
| Expiry date | Apr 24, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/435
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A platinum deposition method uses a combination of an oxide adhesion layer and a high temperature thin film deposition process to produce platinum bottom electrodes for ferroelectric capacitors. The platinum bottom electrode is deposited onto a TiOx layer at temperatures between about 300 and 800° C. Deposition at high temperatures changes the platinum stress from compressive to tensile, increases platinum grain size, and provides a more thermally stable substrate for subsequent PZT deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.