Semiconductor device manufacturing method
US6682944B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2002 |
| Grant date | Jan 27, 2004 |
| Priority date | — |
| Expiry date | Oct 30, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a semiconductor device manufacturing method having a ferroelectric or high-dielectric capacitor, which comprises the steps of forming an underlying insulating film over a semiconductor substrate, forming a first conductive film on the underlying insulating film, forming a dielectric film consisting of ferroelectric material and high-dielectric material on the first conductive film, forming a second conductive film on the dielectric film, etching selectively the second conductive film in a first atmosphere containing a bromine to form a capacitor upper electrode, etching selectively the dielectric film in a second atmosphere containing a chlorine to form a capacitor dielectric film, and etching selectively the first conductive film in a third atmosphere containing the bromine to form a capacitor lower electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.