Method of manufacturing a semiconductor
US6682971B2 · kind B2 · utility
448Cited by
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7Claims
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Key dates
| Filing date | Mar 29, 2001 |
| Grant date | Jan 27, 2004 |
| Priority date | — |
| Expiry date | Jul 5, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28568
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semiconductor manufacturing method and a semiconductor manufacturing apparatus capable of manufacturing semiconductor devices without the need of specifically determining an optimal configuration of a gas mixing chamber (6) with care or elaboration. A ruthenium raw gas feed pipe (4) and an oxygen-containing gas feed pipe (5) are merged with each other at a location upstream of a gas mixing chamber (6), so that the ruthenium raw gas and the gas containing oxygen atoms (e.g., oxygen (O2), ozone (O3), etc.) are mixed with each other prior to entering the gas mixing chamber (6).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.