Separation method of semiconductor layer and production method of solar cell
US6682990B1 · kind B1 · utility
85Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2000 |
| Grant date | Jan 27, 2004 |
| Priority date | — |
| Expiry date | Feb 9, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The separation method of a semiconductor layer according to the present invention comprises separating a semiconductor layer and a semiconductor substrate at a separation layer formed therebetween, wherein a face of the semiconductor layer at the side opposite to the separation layer and/or a face of the semiconductor substrate at the side opposite to the separation layer are held by utilizing an ice layer, whereby it is unnecessary to use an adhesive as holding means and at the same time it is possible to easily and uniformly separate them.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.