Process for forming hafnium oxide films
US6683011B2 · kind B2 · utility
28Cited by
1References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2001 |
| Grant date | Jan 27, 2004 |
| Priority date | — |
| Expiry date | Jan 5, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming a hafnium oxide-containing film on a substrate such as silicon that includes introducing an anhydrous hafnium nitrate-containing precursor into a reactor containing the substrate, and converting the precursor into the hafnium oxide-containing film on the substrate by chemical vapor deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.