Semiconductor photodiode and an optical receiver
US6683326B2 · kind B2 · utility
31Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2001 |
| Grant date | Jan 27, 2004 |
| Priority date | — |
| Expiry date | Dec 17, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/48091
Abstract
The present invention relates to a high-sensitivity top-electrode and bottom-illuminated type photodiode. The device consists of a highly doped buffer layer, a photo-detecting layer on a semi-insulating substrate. An electrode is formed on the conductive domain that is formed in the photo-detecting layer, and another electrode is formed on the partly exposed peripheral area of the highly-doped buffer layer by removing a part of the photo-detecting layer. As the semi-insulating substrate absorbs less light in the substrate, a decrease of sensitivity by the substrate absorption can be prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.