Rugged and fast power MOSFET and IGBT
US6683344B2 · kind B2 · utility
26Cited by
7References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2002 |
| Grant date | Jan 27, 2004 |
| Priority date | — |
| Expiry date | Sep 6, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/153
Abstract
A power semiconductor device includes a substrate having an upper surface and a lower surface. A source region of first conductivity is formed within a well region of second conductivity. The source region is provided proximate to the upper surface of the substrate. The well region has a non-polygon design. A gate electrode overlies the upper surface of the substrate. A drain electrode is provided proximate to the lower surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.