Multiple or graded epitaxial wafers for particle or radiation detection
US6683360B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 24, 2002 |
| Grant date | Jan 27, 2004 |
| Priority date | — |
| Expiry date | Jan 24, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
The present invention provides a particle or electromagnetic radiation sensor structure, comprising a substrate (13) having a major surface and a sensitive layer (16) on the major surface of the substrate (13), the sensitive layer (16) being sensitive to particle or electromagnetic radiation and having a first surface (17) remote from the substrate (13). The sensitive layer (16) has a doping concentration gradient from a higher doping level to a lower doping level, the doping concentration decreasing from the substrate (13) to the first surface (17) of the sensitive layer (16). According to an embodiment, over any distance across the sensitive layer (16) which is half of the thickness of the sensitive layer (16), the ratio between the highest doping level and the lowest doping level is at least a factor 2, preferably at least a factor 3 or more.The present invention also provides a method for obtaining such a sensor structure, as well as arrays comprising such sensor structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.