Semiconductor laser and method of producing the same
US6683899B2 · kind B2 · utility
1Cited by
1References
4Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 19, 2001 |
| Grant date | Jan 27, 2004 |
| Priority date | — |
| Expiry date | Apr 22, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/209
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser having a lower clad layer, an active layer, a first upper clad layer and a dry-etching stop layer, all the layers being successively laminated on a compound semiconductor substrate. The semiconductor laser further includes (i) a second upper clad layer, in the form of a ridge, formed above the first upper clad layer, (ii) an etching stop layer present only between the dry-etching stop layer and the second upper clad layer, and (iii) block layers formed at sides of the second upper clad layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.