Photoresist composition and method of forming pattern using the same
US6686120B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2002 |
| Grant date | Feb 3, 2004 |
| Priority date | — |
| Expiry date | Aug 15, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/40
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a photoresist composition including a thermal acid generator and a method of forming a pattern using the same. The photoresist composition includes about 100 parts by weight of an alkali-soluble acryl copolymer, about 5-100 parts by weight of 1,2-quinonediazide compound, about 2-35 parts by weight of nitrogen-containing cross-linking agent and about 0.1-10 parts by weight of a thermal acid generator which produces an acid by heat. The photoresist composition is coated on a substrate and dried to form a photoresist layer. The photoresist layer is exposed by using a mask having a predetermined shape. Thus obtained exposed photoresist layer is developed by using an aqueous alkaline solution to form a photoresist pattern. Thus obtained photoresist pattern is heated to be cured without generating thermal reflow.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.