Methods for controlling the crystallographic texture of thin films with anisotropic ferroelectric polarization or permittivity
US6686210B1 · kind B1 · utility
3Cited by
4References
9Claims
0Family size
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Key dates
| Filing date | Jul 9, 1999 |
| Grant date | Feb 3, 2004 |
| Priority date | — |
| Expiry date | Jul 30, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02205
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for controlling the crystallographic texture of thin films with anisotropic ferroelectric polarization or permittivity by means of ion bombardment resulting in a texture with higher ferroelectric polarization or permittivity which is normally energetically disfavored.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.