Method for fabricating a semiconductor device and a substrate processing apparatus
US6686281B2 · kind B2 · utility
362Cited by
8References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 5, 2002 |
| Grant date | Feb 3, 2004 |
| Priority date | — |
| Expiry date | Sep 5, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/936
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A substrate processing apparatus for forming a boron doped silicon-germanium film on one or more substrates in a reaction furnace of a low pressure CVD apparatus uses a mixture gas of GeH4 and SiH4 as a reaction gas, and BCl3 as a doping gas. The substrate processing apparatus includes a plurality of gas outlets for supplying GeH4 at different locations in the reaction tube and a doping gas line for supplying BCl3 at least at an upstream side of gas flow in the reaction tube.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.