Thin film transistor having a copper alloy wire
US6686661B1 · kind B1 · utility
14Cited by
5References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2000 |
| Grant date | Feb 3, 2004 |
| Priority date | — |
| Expiry date | Oct 12, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/927
Abstract
A thin film transistor and a method of manufacturing the same includes forming a copper alloy line on substrate, an oxidation film formed on the upper surface of the copper alloy line. The copper alloy line includes a concentration y of magnesium, and the copper alloy line has a thickness t. the concentration y of magnesium in copper alloy line is related to the thickness is as follows:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.