Patent · US Expired

Double intracavity contacted long-wavelength VCSELs

US6687281B2 · kind B2 · utility

8Cited by

34References

51Claims

0Family size

Assignee

The Regents of the University of California · US

Inventors

Larry A. Coldren · Lompoc, US
Eric M. Hall · Rochester Hills, US
Shigeru Nakagawa · Tokyo, JP

Key dates

Filing date	Aug 21, 2001
Grant date	Feb 3, 2004
Priority date	—
Expiry date	Aug 21, 2021

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/34306
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A vertical cavity surface emitting laser (VCSEL) includes a semiconductor device having a pair of mirror portions, an active region, a tunnel junction, a pair of cladding layers and a substrate. Heat generated by the VCSEL dissipates through the cladding layers, which utilize an indium phosphide material. The VCSEL also includes selective etches that are used to aperture the active region to allow electric current to be injected into the active region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.