Method of predicting reliabilty of oxide-nitride-oxide based non-volatile memory
US6687648B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2001 |
| Grant date | Feb 3, 2004 |
| Priority date | — |
| Expiry date | Apr 24, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/5002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and computer aided system for predicting the reliability of oxide-nitride-oxide (ONO) based non-volatile memory. ONO memory devices may be programmed. Margin voltages may be recorded initially, and during baking at 100 degrees C. and 300 degrees C. From this data, constants and activation energy may be determined through a first formula. Frenkel-Poole activation energy may be determined. Through the use of a second formula, decay time of the information stored in the ONO memory may be predicted from the activation energy. The first formula may also be used to predict the decay time. The two decay time predictions may be compared to establish confidence. In this manner, data retention of an ONO memory may be reliably predicted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.