Patent · US Expired

CPP magnetoresistive device and method for making same

US6687977B2 · kind B2 · utility

153Cited by
6References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 20, 2001
Grant dateFeb 10, 2004
Priority date
Expiry dateMar 29, 2021

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T29/49052
  • WIPO fieldAudio-visual technology
  • WIPO sectorElectrical engineering

Abstract

A magnetoresistive device includes a metal layer, formed over a substrate, in which a groove is formed. A magnetoresistive element is formed in the groove, forming two magnetoresistive element portions that are separated by a conductive element. A sense current applied to the metal layer flows through the two magnetoresistive element portions with a predominant current-perpendicular-to-plane component. The method includes techniques that are less complex and less expensive than submicron photolithography to form the above described magnetoresistive device with submicron geometries.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.