CPP magnetoresistive device and method for making same
US6687977B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2001 |
| Grant date | Feb 10, 2004 |
| Priority date | — |
| Expiry date | Mar 29, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49052
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive device includes a metal layer, formed over a substrate, in which a groove is formed. A magnetoresistive element is formed in the groove, forming two magnetoresistive element portions that are separated by a conductive element. A sense current applied to the metal layer flows through the two magnetoresistive element portions with a predominant current-perpendicular-to-plane component. The method includes techniques that are less complex and less expensive than submicron photolithography to form the above described magnetoresistive device with submicron geometries.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.