Membrane pressure sensor comprising silicon carbide and method for making same
US6688181B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2001 |
| Grant date | Feb 10, 2004 |
| Priority date | — |
| Expiry date | May 25, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49169
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The invention concerns a pressure sensor (1), able to operate at high temperature and measure the pressure of a hostile medium, comprising:a sensing element (4) integrating a membrane (8) in monocrystalline silicon carbide, made by micro-machining a substrate in polycrystalline silicon carbide, a first surface of membrane (8) intended to contact said medium, a second surface of membrane (8) comprising membrane deformation detection means (9) connected to electric contacts (10) to connect electric connection means (11), the surfaces of sensing element (4) contacting said medium being chemically inert to this medium;a carrier (5) to support sensing element (4) so that said first surface of membrane (8) may be contacted with said medium and the second surface of membrane (8) may be shielded from said medium, carrier (5) being in polycrystalline silicon carbide;a seal strip (6), in material containing silicon carbide, brazed between carrier (5) and sensing element (4) to protect the second surface of membrane (8) from any contact with said medium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.