Method for growing an &agr;-SiC bulk single crystal

US6689212B2 · kind B2 · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Harald Kuhn · Frammersbach, DE
• Rene Stein · Simmerath, DE
• Johannes Volkl · Erlangen, DE

Key dates

• Filing date: Aug 20, 2001
• Grant date: Feb 10, 2004
• Expiry date: Aug 20, 2021

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B29/36
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

An &agr;-SiC bulk single crystal is formed from an SiC gas phase by deposition of SiC on an SiC seed crystal. To enable an SiC bulk single crystal of the 15R type to be grown reproducibly and without restricting the seed crystal, the deposition takes place under a uniaxial tensile strength which includes a predetermined angle with the [0001] axis of the bulk single crystal, so that a rhombohedral crystal is formed.