Nitrogen-doped hydrogenated carbon films by ion beam deposition
US6689425B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 22, 2001 |
| Grant date | Feb 10, 2004 |
| Priority date | — |
| Expiry date | Oct 22, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/30
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Ion beam-deposited, nitrogen-doped C:H films having substantially lower resistivities than undoped ion beam-deposited C:H films and suitable for use as hard, abrasion-resistant overcoat layers for magnetic recording media, such as hard disks, are formed by supplying a mixture of hydrocarbon and nitrogen gases to an ion beam generator. Nitrogen atom content of the films is controlled to within from about 5 to about 25 at. % by appropriate selection of the ratio of hydrocarbon gas flow to nitrogen gas flow. The resultant IBD i-C:HN films exhibit a reduced tendency for charge build-up thereon during hard disk operation by virtue of their lower resistivity vis-à-vis conventional a-C:H materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.