Group IV metal precursors and a method of chemical vapor deposition using the same
US6689427B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2001 |
| Grant date | Feb 10, 2004 |
| Priority date | — |
| Expiry date | Aug 22, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC07C225/14
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
An organometallic precursor of a formula M(L)2 for use in formation of metal oxide thin films, in which M is a group IV metal ion having a charge of +4 and L is a tridentate ligand having a charge of −2, the ligand being represented by the following formula (I): wherein each of R1 and R2, independently, is a linear or branched C1-8 alkyl group; and R3 is a linear or branched C1-8 alkylene group. Also disclosed is a chemical vapor deposition method wherein a metal oxide thin film is formed on a substrate using the organometallic precursor. The precursor exhibits excellent volatility, thermal property and hydrolytic stability and is particularly suitable for the deposition of a multi-component metal oxide thin film containing a group IV metal such as titanium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.