Image sensor
US6690000B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 1999 |
| Grant date | Feb 10, 2004 |
| Priority date | — |
| Expiry date | Dec 1, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/76
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
According to an image sensor disclosed, a pixel circuit includes a photo-diode 14 for generating a photo-electric conversion voltage which corresponds to an input optical level, a transistor 11 which is activated in response to a Reset signal RST, to initialize the photo-diode 14 from a power supply VDD, a transistor 12 which, when connected between the power supply VDD and a bit line BL, amplifies a photo-electric conversion voltage and outputs it onto the bit line BL, and a transistor 13 which is activated by a word-line readout control signal WL, to interconnect the transistor 12 and the bit line BL, in which the transistor 11 is of a depletion type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.