Light emitting device
US6690034B2 · kind B2 · utility
40Cited by
17References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 27, 2001 |
| Grant date | Feb 10, 2004 |
| Priority date | — |
| Expiry date | Jul 27, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
Abstract
There is provided a light emitting device including a TFT having a high driving capacity (on current) and high reliability in a driver circuit and a TFT in which an off current is reduced in a pixel portion. In manufacturing the TFTs, after the TFT having an LDD region is formed, a part of a gate electrode is etched to form the TFT having GOLD region. Thus, the TFTs having required functions can be easily formed in the driver circuit and the pixel portion, respectively, on the same substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.