Metal oxide semiconductor heterostructure field effect transistor

US6690042B2 · kind B2 · utility

Assignee

• Sensor Electronic Technology, Inc.

Inventors

• Muhammad Asif Khan · White Bear Lake, US
• Remigilus Gaska · Latham, US
• Michael Shur · Latham, US
• Jinwci Yang · Lexington, US

Key dates

• Filing date: Sep 27, 2001
• Grant date: Feb 10, 2004
• Expiry date: Sep 27, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

A method and structure for producing nitride based heterostructure devices having substantially lower reverse leakage currents and performance characteristics comparable to other conventional devices. The method and structure include placing one or more layers of nitride-based compounds over a substrate. Additionally, a dielectric layer including silicon dioxide is placed over the nitride-based layers.