Semiconductor device using junction leak current
US6690071B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2002 |
| Grant date | Feb 10, 2004 |
| Priority date | — |
| Expiry date | Nov 13, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B10/15
Abstract
A first well of a first conductivity type is formed in a partial region of the surface layer of a semiconductor substrate. A MOS transistor is formed in the first well. The MOS transistor has a gate insulating film, a gate electrode, and first and second impurity diffusion regions of a second conductivity type on both sides of the gate electrode. A high leak current structure is formed which makes a leak current density when a reverse bias voltage is applied across the first impurity diffusion region and first well become higher than a leak current density when the same reverse bias voltage is applied across the second impurity diffusion region and first well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.