Radiation resistant semiconductor device structure
US6690074B1 · kind B1 · utility
16Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2002 |
| Grant date | Feb 10, 2004 |
| Priority date | — |
| Expiry date | Sep 3, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure is described for reducing radiation induced current flow caused by incident ionizing radiation. The structure comprises a semiconductor substrate; two or more regions of a first conductivity type in the substrate; and a guard ring of a second conductivity type for obstructing radiation induced parasitic current flow between the two or more regions of the first conductivity type. The structure may be used in a pixel, e.g. in a diode or a transistor, for increasing radiation resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.