Patent · US Expired

Semiconductor structure for isolation of semiconductor devices

US6690080B2 · kind B2 · utility

9Cited by

16References

20Claims

0Family size

Assignee

Telefonaktiebolaget LM Ericsson (Publ) · SE

Inventors

Hans Norstrom · Solna, SE
Carl Bjormander · Spånga, SE
Ted Johansson · Djursholm, SE

Key dates

Filing date	Apr 10, 2002
Grant date	Feb 10, 2004
Priority date	—
Expiry date	Apr 10, 2022

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/76232
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In an integrated circuit, particularly an integrated circuit for radio frequency applications, a semiconductor structure for isolation of semiconductor devices that includes a semiconductor substrate, at least one shallow trench extending vertically into the substrate, a deep trench laterally located within the shallow trench, where the deep trench extends vertically further into the substrate. The deep trench is self aligned to the shallow trench with a controlled lateral distance between an edge of the shallow trench and an edge of the deep trench and the lateral extensions of the shallow and deep trenches, respectively, are independently chosen.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.