Non-thermal plasma reactor and method-structural conductor
US6692704B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2001 |
| Grant date | Feb 17, 2004 |
| Priority date | — |
| Expiry date | Mar 19, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H2245/15
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A non-thermal plasma (NTP) reactor structural conductor element includes a base conductor support and a high dielectric constant (“high k”) barrier layer supported by and substantially surrounding the base conductor support to form a structural conductor NTP reactor element. The structural conductor element may comprise a variety of shapes such as plates, sheets, half-box, I shapes, C shapes, or comb shapes, among others. In one embodiment, the dielectric barrier layer includes a coating applied to the base conductor support. In another embodiment, the dielectric barrier layer includes a high k film laminated to the base conductor support. In yet another embodiment, the base conductor support integrally forms the dielectric barrier layer via conversion of surfaces of the base conductor using electrochemical, thermal or chemical means to form the dielectric barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.