Semi-insulating substrate, semiconductor optical device and fabrication method of semiconductor thin film
US6692837B2 · kind B2 · utility
3Cited by
1References
5Claims
0Family size
Assignee
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Key dates
| Filing date | May 10, 2002 |
| Grant date | Feb 17, 2004 |
| Priority date | — |
| Expiry date | May 10, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12681
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semi-insulating InP substrate in which a Ru-doped semi-insulating semiconductor layer is formed on the surface is provided, wherein the Ru-doped semi-insulating semiconductor layer has a complete semi-insulating property. The semiconductor optical device is fabricated by forming the Ru-doped semi-insulating semiconductor layer on a Fe-doped semi-insulating InP substrate, and forming a semiconductor crystal layer to which a p-type impurity is doped.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.