Post-etch cleaning treatment
US6692976B1 · kind B1 · utility
19Cited by
12References
5Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Aug 31, 2000 |
| Grant date | Feb 17, 2004 |
| Priority date | — |
| Expiry date | Oct 10, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/696
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a post-etch cleaning treatment for a semiconductor device such as a FeRAM. The treatment comprises providing an etchant comprising both a fluorine compound and a chlorine compound, and applying the etchant to the semiconductor device in a wet cleaning process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.