Method of removing an amorphous oxide from a monocrystalline surface
US6693033B2 · kind B2 · utility
4Cited by
446References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2001 |
| Grant date | Feb 17, 2004 |
| Priority date | — |
| Expiry date | Oct 26, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/824
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of removing an amorphous oxide from a surface of a monocrystalline substrate is provided. The method includes depositing a passivation material overlying the amorphous oxide. The monocrystalline substrate is then heated so that the amorphous oxide layer decomposes into at least one volatile species that is liberated from the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.