Nitride semiconductor device and method for manufacturing the same
US6693303B2 · kind B2 · utility
13Cited by
4References
7Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jun 11, 2002 |
| Grant date | Feb 17, 2004 |
| Priority date | — |
| Expiry date | Jun 11, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A nitride semiconductor device is composed of Group III nitride semiconductors. The device includes an active layer, and a barrier layer made from a predetermined material and provided adjacent to the active layer. The barrier layer has a greater band-gap than that of the active layer. The device also includes a barrier portion formed of the predetermined material for surrounding a threading dislocation in the active layer. The barrier portion has a vertex. The device also includes a semiconductor layer having an impurity concentration ranging from 1E16/cc to 1E17/cc in which the vertex is placed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.