Lateral semiconductor component in thin-film SOI technology

US6693327B2 · kind B2 · utility

Assignee

• EUPEC Europaeische Gesellschaft fur Leistungshalbleiter mbH · DE

Inventors

• Dirk Priefert · Moers, DE
• Ralf Rudolf · Dresden, DE
• Viktor Boguszewicz · Essen, DE
• Frank Michalzik · Hamminkeln, DE
• Rolf Buckhorst · Mülheim an der Ruhr, DE

Key dates

• Filing date: Feb 12, 2002
• Grant date: Feb 17, 2004
• Expiry date: Feb 12, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

A lateral semiconductor element (10) in thin-film SOI technology comprises an insulator layer (14) which rests on a substrate (12) and is buried under a thin silicon film (16), on top of which the source, or anode, contact (18) and the drain, or cathode, contact (22) are mounted. The anode contact (18) and the cathode contact (22) each lie over separate shield regions (28,30) within substrate (12), with the anode contact (18) being electrically connected with substrate (12).