Voltage booster with increased voltage boost using two pumping capacitors
US6693480B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 27, 2003 |
| Grant date | Feb 17, 2004 |
| Priority date | — |
| Expiry date | Mar 27, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02M3/073
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A voltage booster drives the gate of a bus-switch n-channel transistor to a theoretical maximum of triple the power-supply voltage Vcc. The gate node is first driven to Vcc. Then the back-side of a first capacitor is driven from ground to Vcc, coupling a first voltage boost to the gate node. After a Schmidt-trigger detects the back-side of the first capacitor near Vcc, the back-side of a second capacitor is driven from ground to Vcc. The front-side of the second capacitor is connected to the back-side of the first capacitor. A second voltage boost is coupled across the first and second capacitors to increase the voltage boost of the gate node to near triple Vcc rather than just double Vcc.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.