High voltage switch circuitry
US6693819B2 · kind B2 · utility
25Cited by
15References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2002 |
| Grant date | Feb 17, 2004 |
| Priority date | — |
| Expiry date | Jan 29, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a high voltage switch used with a one-time programmable memory device and a method of setting a state of a one-time programmable memory device using such a high voltage switch. The memory device includes a plurality of one time programmable memory cells arranged in an array and adapted to be programmed using a high voltage, wherein each of the memory cells includes at least one storage element and two gated fuses connected to the storage element. A high voltage switch is connected to at least one of the memory cells and is adapted to switch in a high voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.