Semiconductor laser
US6693935B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2001 |
| Grant date | Feb 17, 2004 |
| Priority date | — |
| Expiry date | Oct 15, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32341
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser includes semiconductor layers stacked on a substrate, and a pair of resonator end surfaces opposed to each other in the direction perpendicular to the stacking direction. In this semiconductor laser, a light emission side reflecting film is formed on one of the resonator end surfaces. A refractive index of the reflecting film against an emission wavelength of laser light is set to a value between an effective refractive index and a refractive index of the substrate. Another semiconductor laser includes a light emission function layer stack including a cladding layer and an active layer formed on one place of a translucent substrate; two electrodes having different polarities, which are provided on the light emission function layer stack side; and a light leakage preventive film formed on the other plane of the translucent substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.