Integrated tunable laser
US6693937B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 10, 2002 |
| Grant date | Feb 17, 2004 |
| Priority date | — |
| Expiry date | Apr 10, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1209
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An integrated tunable laser structure comprising a substrate made of semiconductor material, the substrate comprising a first, a second, and a third section. The first section provides a low-selective interferometric filtering together with an amplification of a light wave resonating in the laser structure. The second section provides continuous fine-tuning and phase adjustment of the light wave, and the third section provides a wavelength selective reflection of the light wave. Each section allows current injection, wherein a current into the first section causes a wavelength shift of the low-selective interferometric filtering, a current into the second section causes a wavelength shift of resonator modes, and a current into the third section causes a wavelength shift of the wavelength selective reflection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.