Method of fabricating an electrostatic vertical and torsional actuator using one single-crystalline silicon wafer
US6694504B2 · kind B2 · utility
2Cited by
4References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 6, 2002 |
| Grant date | Feb 17, 2004 |
| Priority date | — |
| Expiry date | May 6, 2022 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/053
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention, by improving the silicon surface/bulk micromachining technology using two steps of silicon etch mask patterning and four steps of silicon etching, fabricates a structure which has vertically offset electrodes and consequently fabricates an electrostatic vertical and torsional actuator using one single-crystalline silicon wafer. According to the method of the present invention, the problems of the prior art that used a number of silicon wafers and single/double SOI wafers, or combining of these wafers with additional deposited poly-crystalline silicon films, may be resolved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.