Electrically pumped long-wavelength VCSEL with air gap DBR and methods of fabrication
US6696308B1 · kind B1 · utility
3Cited by
8References
7Claims
0Family size
Inventors
Key dates
| Filing date | Oct 27, 2000 |
| Grant date | Feb 24, 2004 |
| Priority date | — |
| Expiry date | Mar 2, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3235
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of fabricating an electrically pumped, long-wavelength vertical cavity surface emitting laser includes epitaxially growing a stack of alternate layers of a first material and a second material on a compatible substrate. A long wave-length active region is epitaxially grown on the stack and a lasing aperture and current confinement volume are defined in the long wave-length active region. A first mirror stack is formed on the long wave-length active region and portions of one of the first material and the second material are removed to form a high reflectivity second mirror stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.