P-type transparent copper-aluminum-oxide semiconductor
US6696700B2 · kind B2 · utility
2Cited by
10References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2002 |
| Grant date | Feb 24, 2004 |
| Priority date | — |
| Expiry date | Mar 8, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
This invention provides a transparent Cu—Al—O semi-conducting film having a p-type conductivity greater than 0.95×10−1 S·cm−1. This invention also relates to a process for preparing a Cu—Al—O film having p-type conductivity, comprising: a) controllably vaporizing organo-copper and organo-aluminum precursors and carrying the vapors into a chemical vapor deposition chamber with an inert gas flow; b)reacting and depositing the vapors on a substrate, preferably a light-transmitting substrate, through a chemical vapor deposition process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.