Power semiconductor component having a mesa edge termination

US6696705B1 · kind B1 · utility

Assignee

• EUPEC Europaeische Gesellschaft fur Leistungshalbleiter mbH · DE

Inventors

• Reiner Barthelmess · Soest, DE
• Gerhard Schmidt · Graz, AT

Key dates

• Filing date: Sep 12, 2000
• Grant date: Feb 24, 2004
• Expiry date: Sep 12, 2020

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/548

Abstract

A power semiconductor component having a mesa edge termination is described. The component has a semiconductor body with first and second surfaces. An inner zone of a first conductivity type is disposed in the semiconductor body. A first zone is disposed in the semiconductor body and is connected to the inner zone. An edge area outside of the first zone has areas etched out. A second zone of a second conductivity type is disposed in the semiconductor body and is connected to the inner zone, and a boundary area between the second zone and the inner zone defines a pn junction. A field stop zone is adjacent the first surface in the edge area. The field stop zone is formed of the first conductivity type and is embedded in the semiconductor body, and the field stop zone is connected to the first zone and to the inner zone.