High voltage integrated switching devices on a bonded and trenched silicon substrate
US6696707B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 1999 |
| Grant date | Feb 24, 2004 |
| Priority date | — |
| Expiry date | Apr 23, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high voltage integrated switching device includes at least one high voltage switching circuit, preferably employing DMOS technology and characterized by a breakdown voltage of at least 100 volts, on a dielectrically isolated, bonded and vertically trenched silicon substrate. Multiple high-voltage switching circuits may be located in close proximity on a single substrate without circuit breakdown or shorting during circuit operation. The circuit may further include one or more low- and/or intermediate-voltage circuits employing, for example, CMOS and bipolar technologies on the same silicon substrate and located in close proximity without voltage breakdown during circuit operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.