Heterojunction bipolar transistor (HBT) having an improved emitter-base junction
US6696710B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2001 |
| Grant date | Feb 24, 2004 |
| Priority date | — |
| Expiry date | Apr 9, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/136
Abstract
A heterojunction bipolar transistor (HBT) having a base-emitter junction that exhibits the desirable properties of a GaAsSb/AlInAs interface, but which includes an intermediate layer in the emitter such that the intermediate layer contacts the GaAsSb base and the AlInAs emitter. The intermediate layer is sufficiently thin to be substantially electrically transparent, but sufficiently thick to provide a surface over which to grow the AlInAs emitter. The intermediate layer may be of a material such as InP, which has a bulk lattice constant that matches the lattice constant of the GaAsSb base and the AlInAs emitter. Alternatively, the intermediate layer may be of a material having a lattice constant different than that of the GaAsSb base and the AlInAs emitter, but may be pseudomorphically grown so as to provide an apparent lattice-match to the GaAsSb base and the AlInAs emitter.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.