Electrically erasable, programmable, non-volatile memory device compatible with a CMOS/SOI production process

US6696723B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Joel Hartmann · Le Pont-de-Claix, FR
• Marc Belleville · Saint-Égrève, FR

Key dates

• Filing date: Jul 28, 1998
• Grant date: Feb 24, 2004
• Expiry date: Jul 28, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

The invention relates to an electrically erasable, non-volatile memory device, having a memory cell of the floating gate type (16), defined by a source zone, a drain zone, a channel zone (8) and a control gate zone (6), the latter being separated from the channel zone by an insulation zone (14), said five zones being implemented in a semiconductor film formed on an insulating layer (4), said memory cell being laterally insulated by one or more insulation zones (10, 12) in contact with the insulating layer.