High breakdown voltage PN junction structure, and related manufacturing process
US6696741B1 · kind B1 · utility
4Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 19, 1999 |
| Grant date | Feb 24, 2004 |
| Priority date | — |
| Expiry date | Nov 19, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
PN junction structure including a first junction region of a first conductivity type, and a second junction region of a second conductivity type, wherein between said first and second junction regions a grid of buried insulating material regions is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.