Integrated vertical resistor structure with reduced dimensions, for high voltage, and manufacturing process thereof
US6696916B2 · kind B2 · utility
2Cited by
8References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2000 |
| Grant date | Feb 24, 2004 |
| Priority date | — |
| Expiry date | Dec 22, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/209
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The high-voltage resistor is of the vertical type, and is formed in a chip which includes a high-voltage region and a low-voltage region superimposed on the high-voltage region, both having a first conductivity type. An isolation region, at least partially buried, extends between the high-voltage region and the low-voltage region, and delimits a vertical resistive region connecting the high-voltage region to the low-voltage region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.