Designs of reference cells for magnetic tunnel junction (MTJ) MRAM
US6697294B1 · kind B1 · utility
187Cited by
6References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2002 |
| Grant date | Feb 24, 2004 |
| Priority date | — |
| Expiry date | Jul 20, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A reference cell circuit for a magnetic tunnel junction MRAM includes two magnetic tunnel junctions where one is always set to a low resistance state and the other is always set to a high resistance state. The two magnetic tunnel junctions are connected between two segments of a bit line. The reference cell also includes a digit line that crosses both of the bit line segments.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.