Light-emitting device and light-emitting apparatus using the same
US6697403B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 16, 2002 |
| Grant date | Feb 24, 2004 |
| Priority date | — |
| Expiry date | Apr 16, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/862
Abstract
A light-emitting device and a light-emitting apparatus using the same. The light-emitting device includes an n-type or p-type substrate, a doped region formed on a first surface of the substrate with a predetermined dopant to be an opposite type from that of the substrate, to an ultra-shallow depth such that light is emitted from a p-n junction between the doped region and the substrate by a quantum confinement effect, a resonator which improves the selectivity of wavelength of the light emitted from the p-n junction, and first and second electrodes formed on the first surface and a second surface of the substrate, respectively, for injection of holes and electrons. The light-emitting device includes the ultra-shallow doped region so that it can emit light with a quantum confinement effect in the p-n junction. A resonator structure to resonate only a particular wavelength range of light is added to the light-emitting device so that the selectivity of light wavelength is markedly improved with excellent efficiency. The intensity of light emission is amplified by the resonator structure, and the directional property of the emitted light can be improved further than that of convention…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.