MOS-type semiconductor integrated circuit
US6700411B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2002 |
| Grant date | Mar 2, 2004 |
| Priority date | — |
| Expiry date | Sep 5, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/00315
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An MOS-type semiconductor integrated circuit has two MOS transistors of the opposite conductivity channel types connected in series between a high-voltage potential terminal and a ground potential terminal. Those two MOS transistors constitute an inverter and their gates are connected together to an input node. As output nodes, first and second nodes are provided with a current path in between which includes transistors whose gates are connected to the high-voltage potential terminal. A current path including the first transistor which constitutes a switch is inserted between the first node and the output node, and a current path including the second transistor and a barrier transistor is inserted between the second node and the output node. The gates of the first and second transistors are respectively connected with complementary clock signals. The bate of the barrier transistor is connected to the high-voltage potential terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.