Programming non-volatile memory devices
US6700820B2 · kind B2 · utility
23Cited by
12References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 3, 2002 |
| Grant date | Mar 2, 2004 |
| Priority date | — |
| Expiry date | Mar 9, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3454
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Programming non-volatile memory devices includes identifying addresses in a data buffer for storing a particular one of a plurality of threshold voltage levels, then pulsing the array memory cells to program the array memory cells to the particular threshold voltage level. The identifying and pulsing is repeated for each of the threshold voltage levels.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.